集成电路制造过程中的晶圆温度监测技术
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TN3 TN37 TH7

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国家自然科学基金 ( 61727818, 51672037)、国家重点研发计划 ( 2017YFC0602102)、四川省国际科技合作与交流研发项目(2019YFH0009)资助


Wafer temperature monitoring technology in integrated circuit manufacturing process
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    摘要:

    随着集成电路的不断发展,低功耗与小面积逐渐成为芯片设计中的重要指标,促使形成电路的器件尺寸不断降低。 在 半导体芯片制造过程中,越小的器件尺寸对工艺过程中温度控制的精度要求越高,晶圆温度的轻微偏离和高于 1% 的温度不均 匀性将会直接影响最终产品的良率。 为实现温度与温度场分布的高精度控制,需要对其进行更为精确的预先检测与实时获取, 集成电路制造中的晶圆温度监测技术应运而生。 围绕接触式和非接触式两大测温技术分支,介绍了监测温度范围为 0℃ ~ 1 300℃的晶圆温度监测技术原理。 本文基于原理分析各技术所具有的优势与仍然不能满足的测温技术要求,追踪各测温 技术的国内外发展现状,展望了未来晶圆温度监测技术的发展方向。

    Abstract:

    With the continuous development of integrated circuits, low power consumption and small area have gradually become the important specifications in chip design, which promotes the continuous reduction in the size of the devices that constitute the circuit. In the semiconductor chip manufacturing process, smaller device size has higher requirements for temperature control accuracy in the process. The slight deviation of the wafer temperature and the temperature non-uniformity higher than 1% will directly affect the yield of the final product. In order to achieve high-precision control of temperature and temperature field distribution, more accurate predetection and real-time acquisition are necessary, which pushes the wafer temperature monitoring technology in the integrated circuit manufacturing come into being. Focuses on the two main directions of contact and non-contact temperature measurement technologies, introduces the principles of the temperature monitoring technologies applied in the temperature monitoring range of 0℃ ~ 1 300℃ , based on the principles analyzes the advantages and drawbacks of various technologies in detail, keeps track the development status of various each temperature measurement technologies both at home and abroad, and looks forward to the future development of wafer temperature monitoring technology.

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贾镜材,钟业奎,张泽展,姜 晶,王 超.集成电路制造过程中的晶圆温度监测技术[J].仪器仪表学报,2021,(1):15-29

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  • 在线发布日期: 2023-06-28
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