Insulate gate bipolar transistor (IGBT) is extensively utilized in aerospace, weapon systems, modern industry, transportation, and power systems. Due to the complex environment, IGBTs are highly susceptible anomalies, leading to system failures and significant economic losses as well as casualties. Consequently, IGBT fault detection has garnered widespread attention and significant focus from researchers. However, systematic reviews of fault detection techniques for IGBTs are scarce, hindering practical engineers' deep understanding and knowledge of this field. Therefore, this review provides a systematic overview of research achievements in IGBT fault detection from a methodological perspective. Firstly, an overview of the basic structure, operation principles, and common failure mechanisms of IGBTs is presented. Secondly, IGBT fault detection technologies are categorized into three major classes based on detection methods, with a summary of the advantages and limitations of each class. Finally, considering the current technological advancements, a deep analysis of challenges and prospects of the field of IGBT fault detection is provided.