The evaluation of electromigration lifetime of through-silicon via in 3D packaging often requires multiple equipment and instruments to cope with different test requirements, which not only increases the complexity, but also may introduce uncertainties. The LabVIEW was conducted as the upper computer, the programmable controller and industrial personal computer were used as the core control unit, and the lifetime evaluation system of TSV electromigration was developed by combining the precision power supply, high-precision multimeter, relay array, and sample connecting terminal, so as to ensure the accurate acquisition and monitoring of the key parameters. With the aid of the developed evaluation system for electromigration lifetime of TSV, the characteristic failure properties of TSV were analyzed under different electrical stresses (1×105、5×105 and 1×106 A/cm2) and temperature stresses (25℃、50℃ and 75℃) by carrying out the accelerated electromigration lifetime tests on dual-via TSV samples. The experimental results show that at the same temperature, the higher the current, the faster the TSV samples fail. The failure time of the samples at the current density of 1×105 A/cm2 at 25℃ is about 56.2 h, while it is only 10.5 h at 1×106 A/cm2. When the current is the same, the higher the temperature, the faster the TSV samples fail, and the failure time decreases as the temperature is increased from 25℃ to 75℃ by about 64.9%. The characteristic failure time of the TSV samples is obtained based on their failure time, and the Black lifetime model of TSV electromigration and its parameters are obtained through design algorithms, with Ea=0.672, n=0.665 825, and A=6.089 9×10-130.