Zhao Yidan
1.Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China; 2. Shanghai Tech University, Shanghai 201210, ChinaSun Hao
Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, ChinaZhang Qilian
Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, ChinaSun Xiaowei
Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China1.Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China; 2. Shanghai Tech University, Shanghai 201210, China
TN313
Switching diodes are a kind of the most widely used in microwave control circuits of control devices, and it can obtain the good performance of short circuit and open circuit. The thickness of I region has an important effect on the characteristics of PIN diodes device.In this paper, the structure of InPbase PIN switching diode device is modeled bySilvaco TCAD software, and then analyze the influence of different I region thickness on the current and voltage characteristics of the diode and obtain the optimal value. Usingcompound semiconductor materials epitaxy and device technology platform,InPbase PIN switching diode device is prepared, and the test results of DC characteristics show that, the turn on voltage of PIN switching diode is 0.525 V, and the reverse breakdown voltage is larger than 12 V, which has laid a foundation for further realizing the millimeter wave switching circuits.
